Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

Guojun Liu; Hongmei Wang; H. Makino; Hang Ju Ko; T. Hanada; T. Yao

doi:10.1016/S0022-0248(01)00959-9

Growth of PrSrMnO₃-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

Guojun Liu, Hongmei Wang, H. Makino, Hang Ju Ko, T. Hanada, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr_1-xSr_xMnO₃ thin films has been carried out on NdGaO₃(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr_1-xSr_xMnO₃/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO₃ (1 1 0)∥NdGaO₃ (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

Original language	English
Pages (from-to)	960-965
Number of pages	6
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00959-9
Publication status	Published - 2001 Jul
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 2000 Sept 11 → 2000 Sept 15

Keywords

A1. Atomic force microscopy
A1. Reflection high energy electron diffraction
A1. X-ray diffraction
A3. Molecular beam epitaxy
B1. Oxides
B2. Magnetic materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(01)00959-9

Cite this

@article{454468507cff4c8c8f7d465314b34f03,

title = "Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE",

abstract = "Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.",

keywords = "A1. Atomic force microscopy, A1. Reflection high energy electron diffraction, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Oxides, B2. Magnetic materials",

author = "Guojun Liu and Hongmei Wang and H. Makino and Ko, {Hang Ju} and T. Hanada and T. Yao",

note = "Funding Information: This work is supported by a Grand-in-aid for Scientific Research Priority Area for Ministry of Education, Science and Culture of Japan.; 11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00959-9",

language = "English",

volume = "227-228",

pages = "960--965",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

AU - Liu, Guojun

AU - Wang, Hongmei

AU - Makino, H.

AU - Ko, Hang Ju

AU - Hanada, T.

AU - Yao, T.

N1 - Funding Information: This work is supported by a Grand-in-aid for Scientific Research Priority Area for Ministry of Education, Science and Culture of Japan.

PY - 2001/7

Y1 - 2001/7

N2 - Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

AB - Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

KW - A1. Atomic force microscopy

KW - A1. Reflection high energy electron diffraction

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B2. Magnetic materials

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U2 - 10.1016/S0022-0248(01)00959-9

DO - 10.1016/S0022-0248(01)00959-9

M3 - Conference article

AN - SCOPUS:0035399125

SN - 0022-0248

VL - 227-228

SP - 960

EP - 965

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -