Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

Kazuya Murata; Yuko Mizutani; Emi Iwasaka; Seigou Takashima; Masaru Hori; Toshio Goto; Seiji Samukawa; Tsutomu Tsukada

doi:10.1143/jjap.40.l4

Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

Kazuya Murata, Yuko Mizutani, Emi Iwasaka, Seigou Takashima, Masaru Hori, Toshio Goto, Seiji Samukawa, Tsutomu Tsukada

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Microcrystalline silicon films were formed on glass substrate at 300°C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.

Original language	English
Pages (from-to)	L4-L6
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	1 A/B
DOIs	https://doi.org/10.1143/jjap.40.l4
Publication status	Published - 2001 Jan 15

Keywords

H atom density
Preferential orientation
Pulse-modulation
UHF PECVD
VUVAS
μc-Si:H

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.40.l4

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Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma. / Murata, Kazuya; Mizutani, Yuko; Iwasaka, Emi; Takashima, Seigou; Hori, Masaru; Goto, Toshio; Samukawa, Seiji; Tsukada, Tsutomu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 1 A/B, 15.01.2001, p. L4-L6.

Research output: Contribution to journal › Article › peer-review

@article{5b589477570f4edcb0c4433bb9917c45,

title = "Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma",

abstract = "Microcrystalline silicon films were formed on glass substrate at 300°C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.",

keywords = "H atom density, Preferential orientation, Pulse-modulation, UHF PECVD, VUVAS, μc-Si:H",

author = "Kazuya Murata and Yuko Mizutani and Emi Iwasaka and Seigou Takashima and Masaru Hori and Toshio Goto and Seiji Samukawa and Tsutomu Tsukada",

year = "2001",

month = jan,

day = "15",

doi = "10.1143/jjap.40.l4",

language = "English",

volume = "40",

pages = "L4--L6",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 A/B",

}

TY - JOUR

T1 - Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

AU - Murata, Kazuya

AU - Mizutani, Yuko

AU - Iwasaka, Emi

AU - Takashima, Seigou

AU - Hori, Masaru

AU - Goto, Toshio

AU - Samukawa, Seiji

AU - Tsukada, Tsutomu

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Microcrystalline silicon films were formed on glass substrate at 300°C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.

AB - Microcrystalline silicon films were formed on glass substrate at 300°C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.

KW - H atom density

KW - Preferential orientation

KW - Pulse-modulation

KW - UHF PECVD

KW - VUVAS

KW - μc-Si:H

UR - http://www.scopus.com/inward/record.url?scp=0035862498&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035862498&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.l4

DO - 10.1143/jjap.40.l4

M3 - Article

AN - SCOPUS:0035862498

VL - 40

SP - L4-L6

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 A/B

ER -

Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

Abstract

Keywords

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