Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

Kazuya Murata, Yuko Mizutani, Emi Iwasaka, Seigou Takashima, Masaru Hori, Toshio Goto, Seiji Samukawa, Tsutomu Tsukada

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Microcrystalline silicon films were formed on glass substrate at 300°C using pulse-modulated ultrahigh-frequency plasma, with variation of the pulse duty ratio (10-100%) and the pulse frequency (2-50 kHz). We found that the ratio of (111) to (220) crystalline orientation of films can be precisely controlled by changing the duty ratio or frequency. Variation in crystalline orientation closely correlated with the ratio of silicon atom density to hydrogen atom density in the plasma. Strongly preferential (111) growth was achieved, and we propose that the mechanism for this involves the ratio between silicon species and hydrogen atoms in the pulse-modulated plasma.

Original languageEnglish
Pages (from-to)L4-L6
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number1 A/B
DOIs
Publication statusPublished - 2001 Jan 15

Keywords

  • H atom density
  • Preferential orientation
  • Pulse-modulation
  • UHF PECVD
  • VUVAS
  • μc-Si:H

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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