Growth of polarity-controlled ZnO films on (0001) Al 2O 3

J. S. Park, J. H. Chang, T. Minegishi, H. J. Lee, S. H. Park, I. H. Im, T. Hanada, S. K. Hong, M. W. Cho, T. Yao

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The polarity control of ZnO films grown on (0001) Al 2O 3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr 2O 3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I 8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

Original languageEnglish
Pages (from-to)736-742
Number of pages7
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
Publication statusPublished - 2008 May

Keywords

  • Buffer layers
  • Interface
  • Nitrides
  • PPZnO
  • Polarity
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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