A non-polar (11 20) GaN thin film has been grown on Si(100) substrate for the first time with inserting a non-polar plane AlN/MnS buffer layer using two growth techniques; metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). An a-plane GaN film is not accompanied with the polarization problem along the c-axis growth direction. By cathodoluminescence measurements, the bandedge emission from the GaN film prepared by MOCVD was obtained at 370.4 nm (= 3.347 eV) at room temperature. A broad yellow luminescence emission related to deep level was also observed.
|Number of pages||5|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2003 Dec 1|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: 2003 May 25 → 2003 May 30
ASJC Scopus subject areas
- Condensed Matter Physics