Growth of non-polar a-plane III-nitride thin films on Si(100) using non-polar plane buffer layer

J. H. Song, Y. Z. Yoo, T. Sekiguchi, K. Nakajima, P. Ahmet, T. Chikyow, K. Okuno, M. Sumiya, H. Koinuma

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

A non-polar (11 20) GaN thin film has been grown on Si(100) substrate for the first time with inserting a non-polar plane AlN/MnS buffer layer using two growth techniques; metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). An a-plane GaN film is not accompanied with the polarization problem along the c-axis growth direction. By cathodoluminescence measurements, the bandedge emission from the GaN film prepared by MOCVD was obtained at 370.4 nm (= 3.347 eV) at room temperature. A broad yellow luminescence emission related to deep level was also observed.

Original languageEnglish
Pages (from-to)2520-2524
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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