Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

T. Tanikawa, D. Rudolph, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.

Original languageEnglish
Pages (from-to)4999-5002
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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