Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.
- A3. Metalorganic chemical vapor deposition
- B1. Nitrides
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry