Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

T. Tanikawa; D. Rudolph; T. Hikosaka; Y. Honda; M. Yamaguchi; N. Sawaki

doi:10.1016/j.jcrysgro.2008.08.059

Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

T. Tanikawa, D. Rudolph, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Materials Design Division

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×10⁷ cm^-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.

Original language	English
Pages (from-to)	4999-5002
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.059
Publication status	Published - 2008 Nov 15

Keywords

A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Growth of non-polar (1 1 {\=2} 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE",

abstract = "Selective MOVPE of a (1 1 {\=2} 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a ({\=1} 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.",

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author = "T. Tanikawa and D. Rudolph and T. Hikosaka and Y. Honda and M. Yamaguchi and N. Sawaki",

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T1 - Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

AU - Tanikawa, T.

AU - Rudolph, D.

AU - Hikosaka, T.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2008/11/15

Y1 - 2008/11/15

N2 - Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.

AB - Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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