TY - JOUR
T1 - Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE
AU - Tanikawa, T.
AU - Rudolph, D.
AU - Hikosaka, T.
AU - Honda, Y.
AU - Yamaguchi, M.
AU - Sawaki, N.
N1 - Funding Information:
This work was partly supported by the Grant-in-Aid from the Japan Society for the Promotion of Science. The use of the facilities in the Venture Business Laboratory of Nagoya University is acknowledged.
PY - 2008/11/15
Y1 - 2008/11/15
N2 - Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.
AB - Selective MOVPE of a (1 1 2̄ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1̄ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm-2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.
KW - A3. Metalorganic chemical vapor deposition
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2008.08.059
DO - 10.1016/j.jcrysgro.2008.08.059
M3 - Article
AN - SCOPUS:56249089303
VL - 310
SP - 4999
EP - 5002
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 23
ER -