Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

Masayuki Kitamura; Noritaka Usami; Takamasa Sugawara; Kenrato Kutsukake; Kozo Fujiwara; Yoshitaro Nose; Toetsu Shishido; Kazuo Nakajima

doi:10.1016/j.jcrysgro.2005.04.049

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

Masayuki Kitamura, Noritaka Usami, Takamasa Sugawara, Kenrato Kutsukake, Kozo Fujiwara, Yoshitaro Nose, Toetsu Shishido, Kazuo Nakajima

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.

Original language	English
Pages (from-to)	419-424
Number of pages	6
Journal	Journal of Crystal Growth
Volume	280
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.04.049
Publication status	Published - 2005 Jul 1

Keywords

A2. Floating zone technique
A2. Seed crystals
B2. Semiconducting silicon
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique. / Kitamura, Masayuki; Usami, Noritaka; Sugawara, Takamasa; Kutsukake, Kenrato; Fujiwara, Kozo; Nose, Yoshitaro; Shishido, Toetsu; Nakajima, Kazuo.

In: Journal of Crystal Growth, Vol. 280, No. 3-4, 01.07.2005, p. 419-424.

Research output: Contribution to journal › Article › peer-review

@article{0c247e002ae14e01ae5e15c7bbf9a1db,

title = "Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique",

abstract = "The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.",

keywords = "A2. Floating zone technique, A2. Seed crystals, B2. Semiconducting silicon, B3. Solar cells",

author = "Masayuki Kitamura and Noritaka Usami and Takamasa Sugawara and Kenrato Kutsukake and Kozo Fujiwara and Yoshitaro Nose and Toetsu Shishido and Kazuo Nakajima",

year = "2005",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2005.04.049",

language = "English",

volume = "280",

pages = "419--424",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

AU - Kitamura, Masayuki

AU - Usami, Noritaka

AU - Sugawara, Takamasa

AU - Kutsukake, Kenrato

AU - Fujiwara, Kozo

AU - Nose, Yoshitaro

AU - Shishido, Toetsu

AU - Nakajima, Kazuo

PY - 2005/7/1

Y1 - 2005/7/1

N2 - The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.

AB - The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.

KW - A2. Floating zone technique

KW - A2. Seed crystals

KW - B2. Semiconducting silicon

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=20444428332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20444428332&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.04.049

DO - 10.1016/j.jcrysgro.2005.04.049

M3 - Article

AN - SCOPUS:20444428332

VL - 280

SP - 419

EP - 424

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -