TY - JOUR
T1 - Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
AU - Kitamura, Masayuki
AU - Usami, Noritaka
AU - Sugawara, Takamasa
AU - Kutsukake, Kenrato
AU - Fujiwara, Kozo
AU - Nose, Yoshitaro
AU - Shishido, Toetsu
AU - Nakajima, Kazuo
N1 - Funding Information:
The authors would like to acknowledge R. Shimokawa, G. Sazaki, and T. Ujihara for fruitful discussions, and M. Tayanagi for her technical support. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan.
PY - 2005/7/1
Y1 - 2005/7/1
N2 - The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.
AB - The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.
KW - A2. Floating zone technique
KW - A2. Seed crystals
KW - B2. Semiconducting silicon
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2005.04.049
DO - 10.1016/j.jcrysgro.2005.04.049
M3 - Article
AN - SCOPUS:20444428332
VL - 280
SP - 419
EP - 424
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -