Growth of Lu2O3 and HfO2 based high melting temperature single crystals by indirect heating method using arc plasma

Kyoung Jin Kim, Kei Kamada, Rikito Murakami, Takahiko Horiai, Shiori Ishikawa, Vladimir V. Kochurikhin, Masao Yoshino, Akihiro Yamaji, Yasuhiro Shoji, Shunsuke Kurosawa, Satoshi Toyoda, Hiroki Sato, Yuui Yokota, Yuji Ohashi, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review


A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900, and 2840C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu2O3 sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (µ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu2O3 and Lu0.18Hf0.82O1.91. In the case of the µ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.

Original languageEnglish
Article number619
Pages (from-to)1-8
Number of pages8
Issue number7
Publication statusPublished - 2020 Jul


  • Core heating method
  • High melting point materials
  • Oxides
  • Scintillators
  • Single-crystal growth

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry


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