Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE

Hironori Komaki, Teruyuki Nakamura, Ryuji Katayama, Kentaro Onabe, Masashi Ozeki, Tetsuo Ikari

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


Growth temperature dependence of In-rich InGaN growth properties for each Ga/(Ga+In) supply ratio by radio-frequency plasma assisted molecular beam epitaxy was investigated. The luminescence property of In-rich InGaN films up to 20% of Ga improved compared with that of InN because their growth temperatures could be set at high and high purity InGaN films were obtained. This effect can be partly interpreted as a result of the larger bond strength of Ga-N than that of In-N. However, the InGaN films tend to be Ga-rich in case of relatively high growth temperatures. Also, InGaN dot-like structures at intermediate composition were grown as a result of the combination effect of phase separation due to the immiscibility of GaN into InN and local strain due to lattice mismatch between InGaN and underlying GaN buffer layer.

Original languageEnglish
Pages (from-to)473-477
Number of pages5
JournalJournal of Crystal Growth
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Apr
Externally publishedYes


  • A1. Photoluminescence
  • A1. Surface structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. InGaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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