Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC 4H9)4 multilayer adsorption

Daisuke Hojo, Yi Xuan, Tetsuji Yasuda

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1 Citation (Scopus)


In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H 5)4 (TEOS) and Hf(tOC4H 9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm-1.

Original languageEnglish
Pages (from-to)L1433-L1435
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number46-49
Publication statusPublished - 2005 Nov 25


  • ALD
  • Adsorption
  • Deposition
  • HfSiO
  • High-k dielectrics
  • Hydrolysis
  • Vapor-liquid hybrid deposition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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