In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H 5)4 (TEOS) and Hf(tOC4H 9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm-1.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005 Nov 25|
- High-k dielectrics
- Vapor-liquid hybrid deposition
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)