Growth of Ga1-xBxN by molecular beam epitaxy

Vincent Vezin, Satoshi Yatagai, Hiroyuki Shiraki, Satoshi Uda

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Pseudobinary compounds of column III elements and nitrogen are semiconductors widely studied for optoelectronic applications. Ga1-xBxN compounds are considered to be prone to phase separation due to the large difference in bond length between B-N and Ga-N. However if a sufficient amount of boron can be incorporated to Ga1-xBxN compounds, lattice matching with substrates such as SiC, AlN and Ga1-xAlxN may be achieved. We used molecular beam epitaxy to grow Ga1-xBxN films on sapphire c faces with various values of x. Single-phase wurtzite Ga1-xBxN with x up to 4.56% has been obtained.

Original languageEnglish
Pages (from-to)L1483-L1485
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number11 SUPPL. B
Publication statusPublished - 1997 Nov 15
Externally publishedYes

Keywords

  • Electron probe microanalysis
  • Gallium boron nitride
  • Molecular beam epitaxy
  • Phase separation
  • X-ray diffraction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Vezin, V., Yatagai, S., Shiraki, H., & Uda, S. (1997). Growth of Ga1-xBxN by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 2: Letters, 36(11 SUPPL. B), L1483-L1485.