TY - JOUR
T1 - Growth of GaN single crystals from a Na-Ga melt at 750 °C and 5 MPa of N2
AU - Aoki, Masato
AU - Yamane, Hisanori
AU - Shimada, Masahiko
AU - Sekiguchi, Takashi
AU - Hanada, Takashi
AU - Yao, Takafumi
AU - Sarayama, Seiji
AU - Disalvo, Francis J.
N1 - Funding Information:
This work was supported in part by the NEDO International Joint Research Program. We would like to thank Professor Tadashi Endo and Hirotsugu Takizawa for Hall measurements.
PY - 2000/9/1
Y1 - 2000/9/1
N2 - GaN single crystals were synthesized by heating a Na-Ga melt placed in a BN crucible at 750 °C and 5 MPa of N2 for 200 h. The yields and morphology of the single crystals were varied with Na/(Na+Ga) molar ratio (rNa) in the starting composition of the melts. Colorless transparent bulk single crystals with a size of 3 mm in the longest direction were obtained at rNa = 0.60. The full-width at half-maximum (FWHM) of the rocking curve measured for 0 0 0 4 X-ray diffraction peak was 25 arcsec. The electrical resistivity of the platelet crystals was 0.04 Ω cm with a carrier concentration (n-type) of 1-2×1018 cm-3 and a mobility of 100 cm2 V-1 s-1 at room temperature. No emission peaks or bands except at 365 nm, corresponding to near-band emission, were observed at room temperature in the cathodoluminescence spectrum.
AB - GaN single crystals were synthesized by heating a Na-Ga melt placed in a BN crucible at 750 °C and 5 MPa of N2 for 200 h. The yields and morphology of the single crystals were varied with Na/(Na+Ga) molar ratio (rNa) in the starting composition of the melts. Colorless transparent bulk single crystals with a size of 3 mm in the longest direction were obtained at rNa = 0.60. The full-width at half-maximum (FWHM) of the rocking curve measured for 0 0 0 4 X-ray diffraction peak was 25 arcsec. The electrical resistivity of the platelet crystals was 0.04 Ω cm with a carrier concentration (n-type) of 1-2×1018 cm-3 and a mobility of 100 cm2 V-1 s-1 at room temperature. No emission peaks or bands except at 365 nm, corresponding to near-band emission, were observed at room temperature in the cathodoluminescence spectrum.
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U2 - 10.1016/S0022-0248(00)00518-2
DO - 10.1016/S0022-0248(00)00518-2
M3 - Article
AN - SCOPUS:0034273269
VL - 218
SP - 7
EP - 12
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -