Growth of GaN single crystals from a Na-Ga melt at 750 °C and 5 MPa of N2

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi, Takashi Hanada, Takafumi Yao, Seiji Sarayama, Francis J. Disalvo

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)

Abstract

GaN single crystals were synthesized by heating a Na-Ga melt placed in a BN crucible at 750 °C and 5 MPa of N2 for 200 h. The yields and morphology of the single crystals were varied with Na/(Na+Ga) molar ratio (rNa) in the starting composition of the melts. Colorless transparent bulk single crystals with a size of 3 mm in the longest direction were obtained at rNa = 0.60. The full-width at half-maximum (FWHM) of the rocking curve measured for 0 0 0 4 X-ray diffraction peak was 25 arcsec. The electrical resistivity of the platelet crystals was 0.04 Ω cm with a carrier concentration (n-type) of 1-2×1018 cm-3 and a mobility of 100 cm2 V-1 s-1 at room temperature. No emission peaks or bands except at 365 nm, corresponding to near-band emission, were observed at room temperature in the cathodoluminescence spectrum.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalJournal of Crystal Growth
Volume218
Issue number1
DOIs
Publication statusPublished - 2000 Sep 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth of GaN single crystals from a Na-Ga melt at 750 °C and 5 MPa of N<sub>2</sub>'. Together they form a unique fingerprint.

Cite this