Growth of GaN single crystals from a Na-Ga melt at 750 °C and 5 MPa of N2

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi, Takashi Hanada, Takafumi Yao, Seiji Sarayama, Francis J. Disalvo

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72 Citations (Scopus)


GaN single crystals were synthesized by heating a Na-Ga melt placed in a BN crucible at 750 °C and 5 MPa of N2 for 200 h. The yields and morphology of the single crystals were varied with Na/(Na+Ga) molar ratio (rNa) in the starting composition of the melts. Colorless transparent bulk single crystals with a size of 3 mm in the longest direction were obtained at rNa = 0.60. The full-width at half-maximum (FWHM) of the rocking curve measured for 0 0 0 4 X-ray diffraction peak was 25 arcsec. The electrical resistivity of the platelet crystals was 0.04 Ω cm with a carrier concentration (n-type) of 1-2×1018 cm-3 and a mobility of 100 cm2 V-1 s-1 at room temperature. No emission peaks or bands except at 365 nm, corresponding to near-band emission, were observed at room temperature in the cathodoluminescence spectrum.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2000 Sep 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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