Growth of GaN quantum well film on Si substrate and its application to a GaN-Si hybrid lightning device

F. R. Hu, R. Ito, Y. Zhao, Yoshiaki Kanamori, Kazuhiro Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We propose here a new light source with a light beam steering mechanism. The direction of the light beam emitted from an array of the light emitting diodes (LEDs) can be changed by a micro-actuator. The proposed device is monolithically composed of the GaN LEDs and Si MEMS structure. Basic researches on the growth of GaN crystals on Si substrate were carried out. Quantum well (QW) structures consisting of InGaN/GaN crystals were formed with a buffer layer between the GaN crystal and Si substrate. Column-like GaN crystals with the QWs were grown Due to the column structure and the buffer layer, the crystals were relaxed enough to obtain strong photoluminescence. From Si substrate with GaN crystal, a micro-stage with comb actuators on which the InGaN/GaN QW film is patterned has also been fabricated.

Original languageEnglish
Title of host publicationIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006
Pages27-28
Number of pages2
Publication statusPublished - 2006 Dec 1
EventIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006 - Big Sky, MT, United States
Duration: 2006 Aug 212006 Aug 24

Publication series

NameIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006

Other

OtherIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006
CountryUnited States
CityBig Sky, MT
Period06/8/2106/8/24

Keywords

  • GaN semiconductor
  • Lightning device
  • Monolithic integration
  • Quantum well
  • Si micro actuator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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