Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Kazuyuki Tamura; Yuichiro Kuroki; Kanji Yasui; Maki Suemitsu; Takashi Ito; Tetsuro Endou; Hideki Nakazawa; Yuzuru Narita; Masasuke Takata; Tadashi Akahane

doi:10.1016/j.tsf.2007.06.200

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Kazuyuki Tamura, Yuichiro Kuroki, Kanji Yasui, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH₃) and trimetylgallium (TMG) under low V/III source gas ratio (NH₃/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C₃H₈). The AlN layer was deposited as a buffer layer using NH₃ and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH_x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Original language	English
Pages (from-to)	659-662
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2007.06.200
Publication status	Published - 2008 Jan 15

Keywords

AlN
GaN
Hot-mesh CVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.06.200

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title = "Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD",

abstract = "GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.",

keywords = "AlN, GaN, Hot-mesh CVD",

author = "Kazuyuki Tamura and Yuichiro Kuroki and Kanji Yasui and Maki Suemitsu and Takashi Ito and Tetsuro Endou and Hideki Nakazawa and Yuzuru Narita and Masasuke Takata and Tadashi Akahane",

note = "Funding Information: This work was supported by a Specially Promoted Program, Center for Interdisciplinary Research, Tohoku University.",

year = "2008",

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day = "15",

doi = "10.1016/j.tsf.2007.06.200",

language = "English",

volume = "516",

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T1 - Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

AU - Tamura, Kazuyuki

AU - Kuroki, Yuichiro

AU - Yasui, Kanji

AU - Suemitsu, Maki

AU - Ito, Takashi

AU - Endou, Tetsuro

AU - Nakazawa, Hideki

AU - Narita, Yuzuru

AU - Takata, Masasuke

AU - Akahane, Tadashi

N1 - Funding Information: This work was supported by a Specially Promoted Program, Center for Interdisciplinary Research, Tohoku University.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

AB - GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

KW - AlN

KW - GaN

KW - Hot-mesh CVD

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U2 - 10.1016/j.tsf.2007.06.200

DO - 10.1016/j.tsf.2007.06.200

M3 - Article

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VL - 516

SP - 659

EP - 662

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 5

ER -

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Abstract

Keywords

ASJC Scopus subject areas

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