Abstract
GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.
Original language | English |
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Pages (from-to) | 659-662 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2008 Jan 15 |
Keywords
- AlN
- GaN
- Hot-mesh CVD
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry