Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Aihua Zhong, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/γ. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

Original languageEnglish
Article number686
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume7
Issue number1
DOIs
Publication statusPublished - 2012

Keywords

  • GaN growth on Si substrate
  • GaN nanowall network
  • Hall measurement
  • N/Ga ratio
  • Porous GaN
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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