Abstract
GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.
Original language | English |
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Pages (from-to) | 171-174 |
Number of pages | 4 |
Journal | IEEJ Transactions on Electrical and Electronic Engineering |
Volume | 5 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 Jan 1 |
Keywords
- Cooling
- GaN LED
- Membrane
ASJC Scopus subject areas
- Electrical and Electronic Engineering