Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

Masashi Wakui, Fang Ren Hu, Hidehisa Sameshima, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalIEEJ Transactions on Electrical and Electronic Engineering
Volume5
Issue number2
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Cooling
  • GaN LED
  • Membrane

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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