Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

Masashi Wakui; Fang Ren Hu; Hidehisa Sameshima; Kazuhiro Hane

doi:10.1002/tee.20513

Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

Masashi Wakui, Fang Ren Hu, Hidehisa Sameshima, Kazuhiro Hane

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	5
Issue number	2
DOIs	https://doi.org/10.1002/tee.20513
Publication status	Published - 2010 Jan 1

Keywords

Cooling
GaN LED
Membrane

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1002/tee.20513

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abstract = "GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.",

keywords = "Cooling, GaN LED, Membrane",

author = "Masashi Wakui and Hu, {Fang Ren} and Hidehisa Sameshima and Kazuhiro Hane",

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TY - JOUR

T1 - Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

AU - Wakui, Masashi

AU - Hu, Fang Ren

AU - Sameshima, Hidehisa

AU - Hane, Kazuhiro

PY - 2010/1/1

Y1 - 2010/1/1

N2 - GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.

AB - GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.

KW - Cooling

KW - GaN LED

KW - Membrane

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M3 - Article

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EP - 174

JO - IEEJ Transactions on Electrical and Electronic Engineering

JF - IEEJ Transactions on Electrical and Electronic Engineering

SN - 1931-4973

IS - 2

ER -

Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

Abstract

Keywords

ASJC Scopus subject areas

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