GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.
|Number of pages||4|
|Journal||IEEJ Transactions on Electrical and Electronic Engineering|
|Publication status||Published - 2010 Jan 1|
- GaN LED
ASJC Scopus subject areas
- Electrical and Electronic Engineering