Abstract
GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.
| Original language | English |
|---|---|
| Pages (from-to) | 573-576 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 1 PART 2 |
| DOIs | |
| Publication status | Published - 2008 Jan 22 |
Keywords
- Ammonia
- Gallium nitride
- Hot-mesh chemical vapor deposition
- Ruthenium
- Tungsten mesh
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Fukada, Y., Yasui, K., Kuroki, Y., Suemitsu, M., Ito, T., Endou, T., Nakazawa, H., Narita, Y., Takata, M., & Akahane, T. (2008). Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh. Japanese journal of applied physics, 47(1 PART 2), 573-576. https://doi.org/10.1143/JJAP.47.573