Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

Yusuke Fukada, Kanji Yasui, Yuichiro Kuroki, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number1 PART 2
DOIs
Publication statusPublished - 2008 Jan 22

Keywords

  • Ammonia
  • Gallium nitride
  • Hot-mesh chemical vapor deposition
  • Ruthenium
  • Tungsten mesh

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Fukada, Y., Yasui, K., Kuroki, Y., Suemitsu, M., Ito, T., Endou, T., Nakazawa, H., Narita, Y., Takata, M., & Akahane, T. (2008). Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh. Japanese journal of applied physics, 47(1 PART 2), 573-576. https://doi.org/10.1143/JJAP.47.573