Abstract
GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.
Original language | English |
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Pages (from-to) | 573-576 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 1 PART 2 |
DOIs | |
Publication status | Published - 2008 Jan 22 |
Keywords
- Ammonia
- Gallium nitride
- Hot-mesh chemical vapor deposition
- Ruthenium
- Tungsten mesh
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)