Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

Yusuke Fukada; Kanji Yasui; Yuichiro Kuroki; Maki Suemitsu; Takashi Ito; Tetsuro Endou; Hideki Nakazawa; Yuzuru Narita; Masasuke Takata; Tadashi Akahane

doi:10.1143/JJAP.47.573

Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

Yusuke Fukada, Kanji Yasui, Yuichiro Kuroki, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.

Original language	English
Pages (from-to)	573-576
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.573
Publication status	Published - 2008 Jan 22

Keywords

Ammonia
Gallium nitride
Hot-mesh chemical vapor deposition
Ruthenium
Tungsten mesh

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.573

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@article{f7924938dff84b5b94242b1d2faffbee,

title = "Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh",

abstract = "GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.",

keywords = "Ammonia, Gallium nitride, Hot-mesh chemical vapor deposition, Ruthenium, Tungsten mesh",

author = "Yusuke Fukada and Kanji Yasui and Yuichiro Kuroki and Maki Suemitsu and Takashi Ito and Tetsuro Endou and Hideki Nakazawa and Yuzuru Narita and Masasuke Takata and Tadashi Akahane",

year = "2008",

month = jan,

day = "22",

doi = "10.1143/JJAP.47.573",

language = "English",

volume = "47",

pages = "573--576",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 PART 2",

}

TY - JOUR

T1 - Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

AU - Fukada, Yusuke

AU - Yasui, Kanji

AU - Kuroki, Yuichiro

AU - Suemitsu, Maki

AU - Ito, Takashi

AU - Endou, Tetsuro

AU - Nakazawa, Hideki

AU - Narita, Yuzuru

AU - Takata, Masasuke

AU - Akahane, Tadashi

PY - 2008/1/22

Y1 - 2008/1/22

N2 - GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.

AB - GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.

KW - Ammonia

KW - Gallium nitride

KW - Hot-mesh chemical vapor deposition

KW - Ruthenium

KW - Tungsten mesh

UR - http://www.scopus.com/inward/record.url?scp=54249086722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249086722&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.573

DO - 10.1143/JJAP.47.573

M3 - Article

AN - SCOPUS:54249086722

VL - 47

SP - 573

EP - 576

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 PART 2

ER -

Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

Abstract

Keywords

ASJC Scopus subject areas

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