Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE

H. Ohno, S. Ohtsuka, A. Ohuchi, T. Matsubara, H. Hasegawa

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22 Citations (Scopus)

Abstract

Low temperature growth from 300 to 450°C of GaAs and InAs was investigated in a vertical atmospheric pressure MOVPE system under alternate supply of trimethylgallium or trimethylindium and AsH3. In addition to previously reported atomic layer epitaxy (ALE) of GaAs, InAs growth was for the first time shown to result in ALE at low substrate temperature. The ALE growth occurred above 350°C for GaAs and at 300°C for InAs. A GaAs/InAs superlattice was grown under the conditions where ALE growth of GaAs took place. The superlattice structure was confirmed by X-ray diffraction.

Original languageEnglish
Pages (from-to)342-346
Number of pages5
JournalJournal of Crystal Growth
Volume93
Issue number1-4
DOIs
Publication statusPublished - 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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