Growth of ferromagnetic semiconductor: (Ga,Cr)As

M. Yamada; K. Ono; M. Mizuguchi; J. Okabayashi; M. Oshima; M. Yuri; H. J. Lin; H. H. Hsieh; C. T. Chen; H. Akinaga

doi:10.1063/1.1455611

Growth of ferromagnetic semiconductor: (Ga,Cr)As

M. Yamada, K. Ono, M. Mizuguchi, J. Okabayashi, M. Oshima, M. Yuri, H. J. Lin, H. H. Hsieh, C. T. Chen, H. Akinaga

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A type of GaAs-based ferromagnetic semiconductor, (Ga,Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga,Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga,Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.

Original language	English
Pages (from-to)	7908-7910
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1455611
Publication status	Published - 2002 May 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "A type of GaAs-based ferromagnetic semiconductor, (Ga,Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga,Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga,Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.",

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T2 - (Ga,Cr)As

AU - Yamada, M.

AU - Ono, K.

AU - Mizuguchi, M.

AU - Okabayashi, J.

AU - Oshima, M.

AU - Yuri, M.

AU - Lin, H. J.

AU - Hsieh, H. H.

AU - Chen, C. T.

AU - Akinaga, H.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - A type of GaAs-based ferromagnetic semiconductor, (Ga,Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga,Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga,Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.

AB - A type of GaAs-based ferromagnetic semiconductor, (Ga,Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga,Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga,Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.

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Growth of ferromagnetic semiconductor: (Ga,Cr)As

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