Growth of ferromagnetic semiconductor: (Ga,Cr)As

M. Yamada, K. Ono, M. Mizuguchi, J. Okabayashi, M. Oshima, M. Yuri, H. J. Lin, H. H. Hsieh, C. T. Chen, H. Akinaga

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


A type of GaAs-based ferromagnetic semiconductor, (Ga,Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga,Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga,Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.

Original languageEnglish
Pages (from-to)7908-7910
Number of pages3
JournalJournal of Applied Physics
Issue number10 I
Publication statusPublished - 2002 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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