Growth of ferromagnetic Fe4N epitaxial layers and a-axis-oriented Fe4N/MgO/Fe magnetic tunnel junction on MgO(0 0 1) substrates using molecular beam epitaxy

A. Narahara, K. Ito, T. Suemasu

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16 Citations (Scopus)


a-Axis-oriented 80-nm-thick γ′-Fe4N films were epitaxially grown on MgO(0 0 1) substrates by supplying the Fe and N sources on the predeposited a-axis-oriented 30-nm-thick α-Fe epitaxial film. This technique has been used to form highly a-axis-oriented Fe4N(75 nm)/MgO(1 nm)/Fe(100 nm) magnetic tunnel junctions (MTJs) from the Fe(7 nm)/MgO(1 nm)/Fe(100 nm) on the MgO(0 0 1) substrate. Magnetization versus the magnetic field curve of the MTJ was measured at 280 K, and a two-step hysteresis loop was clearly observed. This observation shows that the two ferromagnetic layers were separated by a 1-nm-thick MgO barrier.

Original languageEnglish
Pages (from-to)1616-1619
Number of pages4
JournalJournal of Crystal Growth
Issue number6
Publication statusPublished - 2009 Mar 1
Externally publishedYes


  • A1. SQUID
  • A3. MBE
  • B2. FeN
  • B2. MgO
  • B2. α-Fe
  • B3. Magnetic tunnel junction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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