Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions

T. Manago; M. Mizuguchi; H. Akinaga

doi:10.1016/S0022-0248(01)02187-X

Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions

T. Manago, M. Mizuguchi, H. Akinaga

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We prepared epitaxially grown Fe films on GaAs (0 0 1) surfaces with different reconstructions. The Ga and As concentrations as a function of the Fe thickness were investigated by Auger electron spectroscopy (AES). The Ga atoms hardly segregated, while the AES signal of As still remained at 20 nm under a low deposition rate (0.02 nm/s). The segregation was considerably suppressed by the higher deposition rate (0.08 nm/s). The cross-sectional transmission electron microscopy (TEM) image showed that an interface between GaAs and Fe was atomically flat and the surface of the 20 nm Fe film was very flat. We have succeeded in preparing Co/Al₂O₃/Fe(0 0 1) tunnel junctions based on an Fe(0 0 1) film. The MR ratio was about 9-11%.

Original language	English
Pages (from-to)	1378-1382
Number of pages	5
Journal	Journal of Crystal Growth
Volume	237-239
Issue number	1 4II
DOIs	https://doi.org/10.1016/S0022-0248(01)02187-X
Publication status	Published - 2002 Apr
Externally published	Yes

Keywords

A1. Segregation
A3. Molecular beam epitaxy
B1. Metals
B1. Oxides
B2. Magnetic materials
B3. Tunnel junction

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)02187-X

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title = "Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions",

abstract = "We prepared epitaxially grown Fe films on GaAs (0 0 1) surfaces with different reconstructions. The Ga and As concentrations as a function of the Fe thickness were investigated by Auger electron spectroscopy (AES). The Ga atoms hardly segregated, while the AES signal of As still remained at 20 nm under a low deposition rate (0.02 nm/s). The segregation was considerably suppressed by the higher deposition rate (0.08 nm/s). The cross-sectional transmission electron microscopy (TEM) image showed that an interface between GaAs and Fe was atomically flat and the surface of the 20 nm Fe film was very flat. We have succeeded in preparing Co/Al2O3/Fe(0 0 1) tunnel junctions based on an Fe(0 0 1) film. The MR ratio was about 9-11%.",

keywords = "A1. Segregation, A3. Molecular beam epitaxy, B1. Metals, B1. Oxides, B2. Magnetic materials, B3. Tunnel junction",

author = "T. Manago and M. Mizuguchi and H. Akinaga",

note = "Funding Information: This work, partly supported by the New Energy and Industrial Technology Development Organization (NEDO), was performed in JRCAT under a joint research agreement between AIST and ATP.",

year = "2002",

month = apr,

doi = "10.1016/S0022-0248(01)02187-X",

language = "English",

volume = "237-239",

pages = "1378--1382",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions

AU - Manago, T.

AU - Mizuguchi, M.

AU - Akinaga, H.

N1 - Funding Information: This work, partly supported by the New Energy and Industrial Technology Development Organization (NEDO), was performed in JRCAT under a joint research agreement between AIST and ATP.

PY - 2002/4

Y1 - 2002/4

N2 - We prepared epitaxially grown Fe films on GaAs (0 0 1) surfaces with different reconstructions. The Ga and As concentrations as a function of the Fe thickness were investigated by Auger electron spectroscopy (AES). The Ga atoms hardly segregated, while the AES signal of As still remained at 20 nm under a low deposition rate (0.02 nm/s). The segregation was considerably suppressed by the higher deposition rate (0.08 nm/s). The cross-sectional transmission electron microscopy (TEM) image showed that an interface between GaAs and Fe was atomically flat and the surface of the 20 nm Fe film was very flat. We have succeeded in preparing Co/Al2O3/Fe(0 0 1) tunnel junctions based on an Fe(0 0 1) film. The MR ratio was about 9-11%.

AB - We prepared epitaxially grown Fe films on GaAs (0 0 1) surfaces with different reconstructions. The Ga and As concentrations as a function of the Fe thickness were investigated by Auger electron spectroscopy (AES). The Ga atoms hardly segregated, while the AES signal of As still remained at 20 nm under a low deposition rate (0.02 nm/s). The segregation was considerably suppressed by the higher deposition rate (0.08 nm/s). The cross-sectional transmission electron microscopy (TEM) image showed that an interface between GaAs and Fe was atomically flat and the surface of the 20 nm Fe film was very flat. We have succeeded in preparing Co/Al2O3/Fe(0 0 1) tunnel junctions based on an Fe(0 0 1) film. The MR ratio was about 9-11%.

KW - A1. Segregation

KW - A3. Molecular beam epitaxy

KW - B1. Metals

KW - B1. Oxides

KW - B2. Magnetic materials

KW - B3. Tunnel junction

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U2 - 10.1016/S0022-0248(01)02187-X

DO - 10.1016/S0022-0248(01)02187-X

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SN - 0022-0248

VL - 237-239

SP - 1378

EP - 1382

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1 4II

ER -

Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions

Abstract

Keywords

ASJC Scopus subject areas

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