Growth of Fe(1 0 0) on GaAs(1 0 0) for tunnel magneto-resistance junctions

T. Manago, M. Mizuguchi, H. Akinaga

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We prepared epitaxially grown Fe films on GaAs (0 0 1) surfaces with different reconstructions. The Ga and As concentrations as a function of the Fe thickness were investigated by Auger electron spectroscopy (AES). The Ga atoms hardly segregated, while the AES signal of As still remained at 20 nm under a low deposition rate (0.02 nm/s). The segregation was considerably suppressed by the higher deposition rate (0.08 nm/s). The cross-sectional transmission electron microscopy (TEM) image showed that an interface between GaAs and Fe was atomically flat and the surface of the 20 nm Fe film was very flat. We have succeeded in preparing Co/Al2O3/Fe(0 0 1) tunnel junctions based on an Fe(0 0 1) film. The MR ratio was about 9-11%.

Original languageEnglish
Pages (from-to)1378-1382
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4II
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

Keywords

  • A1. Segregation
  • A3. Molecular beam epitaxy
  • B1. Metals
  • B1. Oxides
  • B2. Magnetic materials
  • B3. Tunnel junction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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