Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere

M. Yoshimoto, Y. Hishitani, H. Maruta, H. Koinuma, T. Tachibana, S. Nishio, M. Kakihana

Research output: Contribution to journalConference articlepeer-review

Abstract

We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single crystal α-Al2O3) substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torr) and laser ablation (pulsed laser fluence of 3 × 108 W/cm2 at 5 Hz).

Original languageEnglish
Pages (from-to)383-386
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume555
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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