Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere

M. Yoshimoto; Y. Hishitani; H. Maruta; H. Koinuma; T. Tachibana; S. Nishio; M. Kakihana

Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere

M. Yoshimoto, Y. Hishitani, H. Maruta, H. Koinuma, T. Tachibana, S. Nishio, M. Kakihana

Research output: Contribution to journal › Conference article › peer-review

Abstract

We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single crystal α-Al₂O₃) substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torr) and laser ablation (pulsed laser fluence of 3 × 10⁸ W/cm² at 5 Hz).

Original language	English
Pages (from-to)	383-386
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	555
Publication status	Published - 1999 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 1998 Nov 30 → 1998 Dec 3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere",

abstract = "We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single crystal α-Al2O3) substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torr) and laser ablation (pulsed laser fluence of 3 × 108 W/cm2 at 5 Hz).",

author = "M. Yoshimoto and Y. Hishitani and H. Maruta and H. Koinuma and T. Tachibana and S. Nishio and M. Kakihana",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "555",

pages = "383--386",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

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TY - JOUR

T1 - Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere

AU - Yoshimoto, M.

AU - Hishitani, Y.

AU - Maruta, H.

AU - Koinuma, H.

AU - Tachibana, T.

AU - Nishio, S.

AU - Kakihana, M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single crystal α-Al2O3) substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torr) and laser ablation (pulsed laser fluence of 3 × 108 W/cm2 at 5 Hz).

AB - We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single crystal α-Al2O3) substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torr) and laser ablation (pulsed laser fluence of 3 × 108 W/cm2 at 5 Hz).

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M3 - Conference article

AN - SCOPUS:0032591053

VL - 555

SP - 383

EP - 386

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Growth of diamond on sapphire by pulsed laser ablation under oxygen atmosphere

Abstract

ASJC Scopus subject areas

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