Growth of diamond from Si-containing amorphous carbon film using synchrotron radiation

Yuki Kimura, Osamu Kido, Masayuki Oomoto, Koji Ogawa, Hidetoshi Namba, Chihiro Kaito

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Si-doped amorphous carbon film prepared by the simultaneous vacuum evaporation of carbon and silicon has been irradiated by a synchrotron radiation (SR) beam. The preferential growth of diamond crystals was found by transmission electron microscope observation conducted after SR irradiation. It was also found that the solid-solution phase of carbon and silicon with the diamond structure was produced in the as-deposited film and at the initial stage of the crystallization. The solid-solution crystal remained in the stable phase up to 6nm in size. The catalytic effect of Si was prominent in the growth of diamond.

Original languageEnglish
Pages (from-to)L888-L890
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number7 A
DOIs
Publication statusPublished - 2004 Jul 1

Keywords

  • Diamond-like carbon film
  • Synchrotron radiation
  • Synthetic diamond
  • Thin film
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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