The sequentially chalcogenization growth of Cu(In1-x Al x)(SySe1-y)2 (CIASSe) films while controlling the S=(S + Se) ratio was demonstrated using Cu-In-Al precursor [Al/(Al + In) ≤ 0:05]. These processes of sulfurization following selenization and selenization following sulfurization might be diffusion- and reaction-limited, respectively. Therefore, selenization following the sulfurization of Cu(In,Al)S2 may be suitable for controlling the S=(S + Se) ratio by process temperature and time. These results represent the first step toward realizing a solar cell using a CIASSe film grown by sulfurization and selenization using conventional and large-scale equipment.
ASJC Scopus subject areas
- Physics and Astronomy(all)