Growth of Cu(In,Al)(S,Se)2 thin films by selenization and sulfurization for a wide bandgap absorber

Chika Fujiwara, Tomoaki Sato, Yoshifumi Kawasaki, Mutsumi Sugiyama, Shigefusa F. Chichibu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The sequentially chalcogenization growth of Cu(In1-x Al x)(SySe1-y)2 (CIASSe) films while controlling the S=(S + Se) ratio was demonstrated using Cu-In-Al precursor [Al/(Al + In) ≤ 0:05]. These processes of sulfurization following selenization and selenization following sulfurization might be diffusion- and reaction-limited, respectively. Therefore, selenization following the sulfurization of Cu(In,Al)S2 may be suitable for controlling the S=(S + Se) ratio by process temperature and time. These results represent the first step toward realizing a solar cell using a CIASSe film grown by sulfurization and selenization using conventional and large-scale equipment.

Original languageEnglish
Article number05FB07
JournalJapanese journal of applied physics
Volume50
Issue number5 PART 3
DOIs
Publication statusPublished - 2011 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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