Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

H. Okumura, H. Hamaguchi, T. Koizumi, K. Balakrishnan, Y. Ishida, M. Arita, S. Chichibu, H. Nakanishi, T. Nagatomo, S. Yoshida

Research output: Contribution to journalArticlepeer-review

72 Citations (Scopus)

Abstract

Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic AlxGa1-xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

Original languageEnglish
Pages (from-to)390-394
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Keywords

  • Atomic nitrogen
  • Cathodeluminescence
  • Cubic III-nitrides
  • Photoreflectance
  • Plasma-assisted MBE
  • X-ray diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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