Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

H. Okumura; H. Hamaguchi; T. Koizumi; K. Balakrishnan; Y. Ishida; M. Arita; S. Chichibu; H. Nakanishi; T. Nagatomo; S. Yoshida

doi:10.1016/S0022-0248(98)00321-2

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

H. Okumura, H. Hamaguchi, T. Koizumi, K. Balakrishnan, Y. Ishida, M. Arita, S. Chichibu, H. Nakanishi, T. Nagatomo, S. Yoshida

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N₂ plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic Al_xGa_1-xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

Original language	English
Pages (from-to)	390-394
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00321-2
Publication status	Published - 1998 Jun 15
Externally published	Yes

Keywords

Atomic nitrogen
Cathodeluminescence
Cubic III-nitrides
Photoreflectance
Plasma-assisted MBE
X-ray diffraction

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00321-2

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@article{37039b91a78b4583a14e625e099dc804,

title = "Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN",

abstract = "Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic AlxGa1-xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.",

keywords = "Atomic nitrogen, Cathodeluminescence, Cubic III-nitrides, Photoreflectance, Plasma-assisted MBE, X-ray diffraction",

author = "H. Okumura and H. Hamaguchi and T. Koizumi and K. Balakrishnan and Y. Ishida and M. Arita and S. Chichibu and H. Nakanishi and T. Nagatomo and S. Yoshida",

year = "1998",

month = jun,

day = "15",

doi = "10.1016/S0022-0248(98)00321-2",

language = "English",

volume = "189-190",

pages = "390--394",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma

T2 - GaN, AlGaN and AlN

AU - Okumura, H.

AU - Hamaguchi, H.

AU - Koizumi, T.

AU - Balakrishnan, K.

AU - Ishida, Y.

AU - Arita, M.

AU - Chichibu, S.

AU - Nakanishi, H.

AU - Nagatomo, T.

AU - Yoshida, S.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic AlxGa1-xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

AB - Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic AlxGa1-xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

KW - Atomic nitrogen

KW - Cathodeluminescence

KW - Cubic III-nitrides

KW - Photoreflectance

KW - Plasma-assisted MBE

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0032094136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032094136&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)00321-2

DO - 10.1016/S0022-0248(98)00321-2

M3 - Article

AN - SCOPUS:0032094136

VL - 189-190

SP - 390

EP - 394

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

Abstract

Keywords

ASJC Scopus subject areas

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