Abstract
The growth of well-shaped copper (Cu) microflowers assisted by electromigration (EM) and subsequent stress-induced migration (SM) is described. The Cu film is surrounded but not covered by a resist and is pre-stressed by EM under a low current density in air. After finishing the EM pre-stressing, the film has been stored for 6 months in a vacuum at room temperature, and the time-dependent growth of Cu microflowers due to SM is detected. The grown Cu microflowers are about 1-3 μm in size, and the petals are 0.1-1 μm wide and several tens of nanometers thick. The growth mechanism, which is based on atomic diffusion, is discussed. The growth environment is considered to be a key factor in the shape formation of Cu microflowers.
Original language | English |
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Pages (from-to) | 270-272 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 79 |
DOIs | |
Publication status | Published - 2012 Jul 15 |
Keywords
- Atomic diffusion
- Cu microflower
- Electromigration
- Stress-induced migration
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering