Growth of copper microflowers assisted by electromigration under a low current density and subsequent stress-induced migration

Xu Zhao, Masumi Saka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth of well-shaped copper (Cu) microflowers assisted by electromigration (EM) and subsequent stress-induced migration (SM) is described. The Cu film is surrounded but not covered by a resist and is pre-stressed by EM under a low current density in air. After finishing the EM pre-stressing, the film has been stored for 6 months in a vacuum at room temperature, and the time-dependent growth of Cu microflowers due to SM is detected. The grown Cu microflowers are about 1-3 μm in size, and the petals are 0.1-1 μm wide and several tens of nanometers thick. The growth mechanism, which is based on atomic diffusion, is discussed. The growth environment is considered to be a key factor in the shape formation of Cu microflowers.

Original languageEnglish
Pages (from-to)270-272
Number of pages3
JournalMaterials Letters
Volume79
DOIs
Publication statusPublished - 2012 Jul 15

Keywords

  • Atomic diffusion
  • Cu microflower
  • Electromigration
  • Stress-induced migration

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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