Growth of Ca8La2(PO4)6O2 single crystals as substrates for GaN epitaxial growth

A. Yoshikawa; V. V. Kochurikhin; N. Futagawa; K. Shimamura; T. Fukuda

doi:10.1016/S0022-0248(99)00191-8

Growth of Ca₈La₂(PO₄)₆O₂ single crystals as substrates for GaN epitaxial growth

A. Yoshikawa, V. V. Kochurikhin, N. Futagawa, K. Shimamura, T. Fukuda

Materials Property Division

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

〈0 0 0 1〉 oriented Ca₈La₂(PO₄)₆O₂ (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.

Original language	English
Pages (from-to)	302-306
Number of pages	5
Journal	Journal of Crystal Growth
Volume	204
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(99)00191-8
Publication status	Published - 1999 Jul

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.",

author = "A. Yoshikawa and Kochurikhin, {V. V.} and N. Futagawa and K. Shimamura and T. Fukuda",

year = "1999",

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pages = "302--306",

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T1 - Growth of Ca8La2(PO4)6O2 single crystals as substrates for GaN epitaxial growth

AU - Yoshikawa, A.

AU - Kochurikhin, V. V.

AU - Futagawa, N.

AU - Shimamura, K.

AU - Fukuda, T.

PY - 1999/7

Y1 - 1999/7

N2 - 〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.

AB - 〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.

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JF - Journal of Crystal Growth

SN - 0022-0248

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