TY - JOUR
T1 - Growth of Ca8La2(PO4)6O2 single crystals as substrates for GaN epitaxial growth
AU - Yoshikawa, A.
AU - Kochurikhin, V. V.
AU - Futagawa, N.
AU - Shimamura, K.
AU - Fukuda, T.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/7
Y1 - 1999/7
N2 - 〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.
AB - 〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.
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U2 - 10.1016/S0022-0248(99)00191-8
DO - 10.1016/S0022-0248(99)00191-8
M3 - Article
AN - SCOPUS:0033516419
VL - 204
SP - 302
EP - 306
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -