Growth of Ca8La2(PO4)6O2 single crystals as substrates for GaN epitaxial growth

A. Yoshikawa, V. V. Kochurikhin, N. Futagawa, K. Shimamura, T. Fukuda

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13 Citations (Scopus)

Abstract

〈0 0 0 1〉 oriented Ca8La2(PO4)6O2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.

Original languageEnglish
Pages (from-to)302-306
Number of pages5
JournalJournal of Crystal Growth
Volume204
Issue number3
DOIs
Publication statusPublished - 1999 Jul

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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