Growth of Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal and the piezoelectric properties

Tetsuo Kudo; Yasuhiro Shoji; Yuji Ohashi; Andrey Medvedev; Shunsuke Kurosawa; Akira Yoshikawa; Yuui Yokota; Kei Kamada

doi:10.1109/ISAF.2014.6922990

Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties

Tetsuo Kudo, Yasuhiro Shoji, Yuji Ohashi, Andrey Medvedev, Shunsuke Kurosawa, Akira Yoshikawa, Yuui Yokota, Kei Kamada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We grew Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.

Original language	English
Title of host publication	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479938605
DOIs	https://doi.org/10.1109/ISAF.2014.6922990
Publication status	Published - 2014 Oct 13
Event	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014 - State College, United States Duration: 2014 May 12 → 2014 May 16

Publication series

Name	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014

Other

Other	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
Country/Territory	United States
City	State College
Period	14/5/12 → 14/5/16

Keywords

Crystal Growth
Langasite
Piezoelectric Material
Single Crystal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2014.6922990

Cite this

Kudo, T., Shoji, Y., Ohashi, Y., Medvedev, A., Kurosawa, S., Yoshikawa, A., Yokota, Y., & Kamada, K. (2014). Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties. In 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014 [6922990] (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2014.6922990

Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties. / Kudo, Tetsuo; Shoji, Yasuhiro; Ohashi, Yuji et al.

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6922990 (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kudo, T, Shoji, Y, Ohashi, Y, Medvedev, A, Kurosawa, S , Yoshikawa, A , Yokota, Y & Kamada, K 2014, Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties. in 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014., 6922990, 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014, Institute of Electrical and Electronics Engineers Inc., 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014, State College, United States, 14/5/12. https://doi.org/10.1109/ISAF.2014.6922990

Kudo T, Shoji Y, Ohashi Y, Medvedev A, Kurosawa S , Yoshikawa A et al. Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties. In 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6922990. (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014). doi: 10.1109/ISAF.2014.6922990

Kudo, Tetsuo ; Shoji, Yasuhiro ; Ohashi, Yuji et al. / Growth of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ piezoelectric single crystal and the piezoelectric properties. 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014).

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abstract = "We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.",

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N2 - We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.

AB - We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.

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