Growth of Bi4Ge3O12 single crystal by the micro-pulling-down method from bismuth rich composition

J. B. Shim, J. H. Lee, A. Yoshikawa, M. Nikl, D. H. Yoon, T. Fukuda

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22 Citations (Scopus)


Bi4Ge3O12 (BGO) crystals are well-known scintillator material. In this study, BGO single crystal fibers were successfully grown by the micro-pulling-down method with resistance heating system. Considering the volatilization of bismuth, we grew fibers from two different Bi2O3 enriched composition (2.05 mol% Bi2O3-3 mol% GeO2 and 2.1 mol% Bi2O3-3 mol% GeO2). For the composition of Bi2O3 2.1 molar ratio, the best single crystal fibers were obtained for pulling-down rate equal to 0.08 mm/min. The grown fiber crystals from that composition were transparent and nearly colorless except for a slight yellowish tint at the end of the fibers. The distribution coefficient of the Bi and Ge ions in the grown fibers was measured.

Original languageEnglish
Pages (from-to)157-163
Number of pages7
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2002


  • A1. Rich composition
  • A2. Micro-pulling-down method
  • B1. Bismuth germanate

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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