Growth of atomically smooth ultra-thin InSb layers on GaAs substrates by molecular beam epitaxy

K. Kanisawa, H. Yamaguchi, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

We successfully grew an atomically smooth 14.6% lattice-mismatched InSb layer on GaAs substrates under the Frank-van der Merwe (F-vdM) mode from beginning of molecular beam epitaxy (MBE) with eliminating excess Sb adsorption. It is confirmed that the use of (111)A substrate and an In template layer has an advantage to enhance layer-by-layer InSb growth on GaAs substrate. The characterizations with scanning tunneling microscopy (STM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) clarified that we achieved 1 nm height difference per 1 μm2 area, which is comparable to that of homoepitaxially grown GaAs surface.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
Duration: 1998 May 111998 May 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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