Growth of anodic oxide films on oxygen-containing niobium

H. Habazaki, T. Ogasawara, H. Konno, K. Shimizu, K. Asami, K. Saito, S. Nagata, P. Skeldon, G. E. Thompson

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

Original languageEnglish
Pages (from-to)5334-5339
Number of pages6
JournalElectrochimica Acta
Volume50
Issue number27
DOIs
Publication statusPublished - 2005 Sep 20

Keywords

  • Amorphous oxide
  • Anodic niobia
  • Ionic transport
  • Nb-O solid solution

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electrochemistry

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