Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface

Daiyu Kondo, Kazuyuki Sakamoto, Masahide Shima, Wakaba Takeyama, Kenya Nakamura, Kanta Ono, Yoshitaka Kasukabe, Masaharu Oshima

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8 Citations (Scopus)

Abstract

We have investigated the initial growth process of α-Sn films on the In-terminated InSb(111)A-(2 X 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the α-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2 X 2) surface is not the preferable Sn absorption site.

Original languageEnglish
Article number233314
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number23
DOIs
Publication statusPublished - 2004 Dec

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kondo, D., Sakamoto, K., Shima, M., Takeyama, W., Nakamura, K., Ono, K., Kasukabe, Y., & Oshima, M. (2004). Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface. Physical Review B - Condensed Matter and Materials Physics, 70(23), 1-4. [233314]. https://doi.org/10.1103/PhysRevB.70.233314