Growth of aluminum on Si using dimethyl-ethyl amine alane

Yoichiro Neo, Michio Niwano, Hidenori Mimura, Kuniyoshi Yokoo

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The paper describes growth of aluminum on a hydrogen terminated Si (100) surface using dimethyl-ethyl amine alane. The growth rate depends on the substrate temperature with an activation energy of 0.56 eV at the temperature ranging from 150 to 250°C. Selective growth of Al into 1.5-μm diameter via-holes is successfully demonstrated at the substrate temperature of 150°C. In situ FTIR measurements suggest that growth of Al occurs by the chemical reaction between AlH3 and a hydrogen terminated Si surface.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalApplied Surface Science
Volume142
Issue number1
DOIs
Publication statusPublished - 1999 Apr
EventProceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark
Duration: 1998 Jul 61998 Jul 10

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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