Growth of AlxGa1-xN and InyGa1-yN Single Crystals Using the Na Flux Method

K. Yasui, G. K. Kishor, Hisanori Yamane, T. Akahane

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The bulk crystal growth of AlxGa1-xN and InyGa1-yN was investigated by the Na flux method using NaN3, Ga, and Al or In. The crystal size and the yield of the crystal growth were different between AlxGa1-xN and InyGa1-yN. According to Vegard's law, the largest Al composition x in AlxGa1-xN and the largest In composition y in InyGa1-yN were 0.22 and 0.7, respectively.

    Original languageEnglish
    Pages (from-to)415-419
    Number of pages5
    JournalPhysica Status Solidi (A) Applied Research
    Volume188
    Issue number1
    DOIs
    Publication statusPublished - 2001 Nov 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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