Growth of AlxGa1-xN and InyGa1-yN Single Crystals Using the Na Flux Method

K. Yasui, G. K. Kishor, Hisanori Yamane, T. Akahane

Research output: Contribution to journalArticle

Abstract

The bulk crystal growth of AlxGa1-xN and InyGa1-yN was investigated by the Na flux method using NaN3, Ga, and Al or In. The crystal size and the yield of the crystal growth were different between AlxGa1-xN and InyGa1-yN. According to Vegard's law, the largest Al composition x in AlxGa1-xN and the largest In composition y in InyGa1-yN were 0.22 and 0.7, respectively.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - 2001 Nov 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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