The bulk crystal growth of AlxGa1-xN and InyGa1-yN was investigated by the Na flux method using NaN3, Ga, and Al or In. The crystal size and the yield of the crystal growth were different between AlxGa1-xN and InyGa1-yN. According to Vegard's law, the largest Al composition x in AlxGa1-xN and the largest In composition y in InyGa1-yN were 0.22 and 0.7, respectively.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - 2001 Nov 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics