Growth of AlxGa1 - xN (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

Kazuhiko Nozawa, Narihiko Maeda, Yoshiro Hirayama, Naoki Kobayashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Keywords

  • AlGaN
  • GaN
  • MBE
  • Superlattice
  • Transmission electron microscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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