TY - JOUR
T1 - Growth of Aln crystals on Sic substrates by thermal nitridation of Al 2 O 3
AU - You, Yu
AU - Ohtsuka, Makoto
AU - Miyake, Hideto
AU - Fukuyama, Hiroyuki
N1 - Publisher Copyright:
© 2014 The American Ceramic Society.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2014/12
Y1 - 2014/12
N2 - The growth of AlN crystals on c-plane 6H-SiC substrates by thermal nitridation of Al2O3 pellets in the presence of graphite and ZrO2 was demonstrated. Addition of graphite and ZrO2 effectively accelerated the evaporation of Al2O3, yielding c-axis oriented AlN films on SiC substrates. The SiC substrate was severely deteriorated at 2173 K, which produced a porous interface between the AlN film and substrate, resulting in low-quality AlN crystals. The deterioration of SiC was successfully suppressed by introducing a pre-deposited homo-buffer layer, allowing two-dimensional-like growth of AlN. The buffer layer promoted the formation of a high-quality AlN film. At 2173 K, the full-width at half maximum of the X-ray rocking curves of the (0002) and (10-10) planes of the AlN film was 360 and 425 arcsec, respectively.
AB - The growth of AlN crystals on c-plane 6H-SiC substrates by thermal nitridation of Al2O3 pellets in the presence of graphite and ZrO2 was demonstrated. Addition of graphite and ZrO2 effectively accelerated the evaporation of Al2O3, yielding c-axis oriented AlN films on SiC substrates. The SiC substrate was severely deteriorated at 2173 K, which produced a porous interface between the AlN film and substrate, resulting in low-quality AlN crystals. The deterioration of SiC was successfully suppressed by introducing a pre-deposited homo-buffer layer, allowing two-dimensional-like growth of AlN. The buffer layer promoted the formation of a high-quality AlN film. At 2173 K, the full-width at half maximum of the X-ray rocking curves of the (0002) and (10-10) planes of the AlN film was 360 and 425 arcsec, respectively.
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U2 - 10.1111/jace.13183
DO - 10.1111/jace.13183
M3 - Article
AN - SCOPUS:85027918631
VL - 97
SP - 3781
EP - 3786
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 12
ER -