Growth of Aln crystals on Sic substrates by thermal nitridation of Al 2 O 3

Yu You, Makoto Ohtsuka, Hideto Miyake, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The growth of AlN crystals on c-plane 6H-SiC substrates by thermal nitridation of Al2O3 pellets in the presence of graphite and ZrO2 was demonstrated. Addition of graphite and ZrO2 effectively accelerated the evaporation of Al2O3, yielding c-axis oriented AlN films on SiC substrates. The SiC substrate was severely deteriorated at 2173 K, which produced a porous interface between the AlN film and substrate, resulting in low-quality AlN crystals. The deterioration of SiC was successfully suppressed by introducing a pre-deposited homo-buffer layer, allowing two-dimensional-like growth of AlN. The buffer layer promoted the formation of a high-quality AlN film. At 2173 K, the full-width at half maximum of the X-ray rocking curves of the (0002) and (10-10) planes of the AlN film was 360 and 425 arcsec, respectively.

Original languageEnglish
Pages (from-to)3781-3786
Number of pages6
JournalJournal of the American Ceramic Society
Issue number12
Publication statusPublished - 2014 Dec

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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