Growth of AlGaN nanowires by metalorganic chemical vapor deposition

J. Su, M. Gherasimova, G. Cui, H. Tsukamoto, J. Han, T. Onuma, M. Kurimoto, S. F. Chichibu, C. Broadbridge, Y. He, A. V. Nurmikko

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42 Citations (Scopus)

Abstract

Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.

Original languageEnglish
Article number183108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number18
DOIs
Publication statusPublished - 2005 Oct 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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