TY - JOUR
T1 - Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy
AU - Ohno, Hideo
AU - Katsumi, Ryuichi
AU - Takama, Toshihiko
AU - Hasegawa, Hideki
PY - 1985/9
Y1 - 1985/9
N2 - Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.
AB - Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.
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U2 - 10.1143/JJAP.24.L682
DO - 10.1143/JJAP.24.L682
M3 - Article
AN - SCOPUS:0022130574
VL - 24
SP - L682-L684
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
ER -