Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy

Hideo Ohno, Ryuichi Katsumi, Toshihiko Takama, Hideki Hasegawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.

Original languageEnglish
Pages (from-to)L682-L684
JournalJapanese journal of applied physics
Volume24
Issue number9
DOIs
Publication statusPublished - 1985 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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