Abstract
Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.
| Original language | English |
|---|---|
| Pages (from-to) | L682-L684 |
| Journal | Japanese journal of applied physics |
| Volume | 24 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1985 Sep |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Ohno, H., Katsumi, R., Takama, T., & Hasegawa, H. (1985). Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy. Japanese journal of applied physics, 24(9), L682-L684. https://doi.org/10.1143/JJAP.24.L682