Growth of 5 mm GaN Single Crystals at 750°C from an Na-Ga Melt

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. DiSalvo

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

A platelet GaN single crystal having an area of 5 × 3 mm2 was obtained by heating a Na-Ga melt in a BN crucible at 750°C under 5 MPa of N2 for 360 h. Prismatic single crystals with a size of more than 0.5 × 0.5 × 1.0 mm3 grew at a lower content of Na in the starting melt.

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalCrystal Growth and Design
Volume1
Issue number2
DOIs
Publication statusPublished - 2001 Mar 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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