Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

Fumio Matsumoto, Yasunori Okano, Ichiro Yonenaga, Keigo Hoshikawa, Peter Rudolph, Tsuguo Fukuda

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

〈100〉 InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 104 cm-2. Dislocation free cores in S-doped crystals ( > 3×1018 cm-3 ) have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1994
EventProceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA
Duration: 1994 Mar 271994 Mar 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible'. Together they form a unique fingerprint.

Cite this