Growth of β-FeSi2 single crystals by the chemical vapor transport method

J. F. Wang, S. Y. Ji, K. Mimura, Y. Sato, S. H. Song, H. Yamanc, M. Shimada, M. Isshiki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In order to grow β-FeSi2 single crystals by the chemical vapor transport (CVT) method, the growth conditions, including density of iodine transport agent and growth duration, were examined. An iodine density of 8.9 mg cm was thought to be optimum in the present experiment. It was found that the growth duration should be over 4 weeks for growing β-FeSi2 single crystals. X-ray structural analysis revealed that the growth direction of the β-FeSi2 crystals was (110). The growth rate along the directions with lower Miller indexes was slower than that along the directions with higher Miller indexes. The measured lattice constants were a = 0.986 nm, b = 0.780 nm, and c = 0.781 nm. These values are consistent with the previously reported values. Hall measurements showed that the electron mobility was over 350 cm2 V-1 s-1 at 10 K.

Original languageEnglish
Pages (from-to)2905-2909
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number13
DOIs
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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