Growth mode of CeO2 on Si surface

Toyohiro Chikyow; Lee Tye; Nadia A. El-Masry; Salah M. Bedair

Growth mode of CeO₂ on Si surface

Toyohiro Chikyow, Lee Tye, Nadia A. El-Masry, Salah M. Bedair

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The interface structure and electrical properties of CeO₂Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO₂, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO₂ and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeO_x layer and a SiO₂ layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeO_x and the regrowth of crystalline CeO₂. The SiO₂ thickness was also increased by annealing. The modified structure of CeO₂/SiO₂Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO₂ and SiO₂ can have a great potential for SOI structure.

Original language	English
Title of host publication	Interface Control of Electrical, Chemical, and Mechanical Properties
Editors	Peter Borgesen, Klavs F. Jensen, Roger A. Pollak
Publisher	Publ by Materials Research Society
Pages	551-556
Number of pages	6
ISBN (Print)	1558992170
Publication status	Published - 1994 Jan 1
Externally published	Yes
Event	Proceedings of the Fall 1993 MRS Meeting - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 3

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	318
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Fall 1993 MRS Meeting
City	Boston, MA, USA
Period	93/11/29 → 93/12/3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

Growth mode of CeO₂ on Si surface. / Chikyow, Toyohiro; Tye, Lee; El-Masry, Nadia A.; Bedair, Salah M.

Interface Control of Electrical, Chemical, and Mechanical Properties. ed. / Peter Borgesen; Klavs F. Jensen; Roger A. Pollak. Publ by Materials Research Society, 1994. p. 551-556 (Materials Research Society Symposium Proceedings; Vol. 318).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chikyow, T, Tye, L, El-Masry, NA & Bedair, SM 1994, Growth mode of CeO₂ on Si surface. in P Borgesen, KF Jensen & RA Pollak (eds), Interface Control of Electrical, Chemical, and Mechanical Properties. Materials Research Society Symposium Proceedings, vol. 318, Publ by Materials Research Society, pp. 551-556, Proceedings of the Fall 1993 MRS Meeting, Boston, MA, USA, 93/11/29.

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abstract = "The interface structure and electrical properties of CeO2Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO2, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOx layer and a SiO2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOx and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.",

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N2 - The interface structure and electrical properties of CeO2Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO2, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOx layer and a SiO2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOx and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

AB - The interface structure and electrical properties of CeO2Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO2, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOx layer and a SiO2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOx and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

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