Growth mode of CeO2 on Si surface

Toyohiro Chikyow, Lee Tye, Nadia A. El-Masry, Salah M. Bedair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


The interface structure and electrical properties of CeO2Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO2, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOx layer and a SiO2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOx and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

Original languageEnglish
Title of host publicationInterface Control of Electrical, Chemical, and Mechanical Properties
EditorsPeter Borgesen, Klavs F. Jensen, Roger A. Pollak
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558992170
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the Fall 1993 MRS Meeting - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Fall 1993 MRS Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Growth mode of CeO2 on Si surface'. Together they form a unique fingerprint.

Cite this