Growth mode and characteristics of the O2-oxidized Si(100) surface oxide layer observed by real time photoemission measurement

Youichi Takegawa, Yoshiharu Enta, Maki Suemitsu, Nobuo Miyamoto, Hiroo Kato

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (Ts) of 350-730°C and at O2 pressures of 3 × 10-7-1 × 10-5 Torr. At Ts below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at Ts above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number1
Publication statusPublished - 1998 Jan


  • Dry O
  • In situ observation
  • Oxidation
  • Oxide
  • Photoelectron spectroscopy
  • Photoemission
  • Real-time measurement
  • Si(100)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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