Growth mechanism of the Si 110 faceted dendrite

Kozo Fujiwara, H. Fukuda, N. Usami, K. Nakajima, Satoshi Uda

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The growth mechanism of the Si 110 faceted dendrite was studied using an in situ observation technique. We directly observed the growth process of Si faceted dendrites from Si melts. It was found that the shape of the 110 faceted dendrite during growth is markedly different from that of the 112 faceted dendrite; the tip of the 110 faceted dendrite is narrow while that of the 112 faceted dendrite is wide. We present a scheme for the growth shapes of the faceted dendrites based on the experimental evidences.

Original languageEnglish
Article number224106
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number22
DOIs
Publication statusPublished - 2010 Jun 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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