Growth mechanism of Si-faceted dendrites

K. Fujiwara, K. Maeda, N. Usami, K. Nakajima

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

The growth mechanism of Si-faceted dendrite was studied using an insitu observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60° are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.

Original languageEnglish
Article number055503
JournalPhysical Review Letters
Volume101
Issue number5
DOIs
Publication statusPublished - 2008 Jul 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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