The growth mechanism of Si-faceted dendrite was studied using an insitu observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60° are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.
ASJC Scopus subject areas
- Physics and Astronomy(all)