Abstract
The growth mechanism of Si-faceted dendrite was studied using an insitu observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60° are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.
| Original language | English |
|---|---|
| Article number | 055503 |
| Journal | Physical Review Letters |
| Volume | 101 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2008 Jul 31 |
ASJC Scopus subject areas
- Physics and Astronomy(all)