Growth mechanism of AlN crystals via thermal nitridation of sintered Al2O3-ZrO2 plates

Hiroyuki Fukuyama; Mikako Kato; Yu You; Makoto Ohtsuka

doi:10.1016/j.ceramint.2015.12.037

Growth mechanism of AlN crystals via thermal nitridation of sintered Al₂O₃-ZrO₂ plates

Hiroyuki Fukuyama, Mikako Kato, Yu You, Makoto Ohtsuka

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The crystal growth of AlN from aluminum oxides was studied using a thermal nitridation method. Four types of aluminum oxides, sintered Al₂O₃, ZrO₂-containing sintered Al₂O₃, and a- and c-plane sapphires, were used as a source material. As observed, millimeter-sized AlN crystal grains were successfully grown from the ZrO₂-containing sintered Al₂O₃ only at temperatures ranging from 2223 to 2323 K. The growth mechanism, including the role of ZrO₂ additive, was discussed from a thermodynamic viewpoint. The following growth model was proposed: predominant nitridation of ZrO₂ in Al₂O₃ suppresses Al₂O₃ nitridation, and the ZrO₂-Al₂O₃ liquid phase forms, which promotes the formation of Al₂O(g) and Al(g) from Al₂O₃. These Al-based gases react with CN(g) and/or N₂(g) to form AlN crystals on the Al₂O₃-ZrO₂ plate.

Original language	English
Pages (from-to)	5153-5159
Number of pages	7
Journal	Ceramics International
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2015.12.037
Publication status	Published - 2016 Mar 1

Keywords

Nitrides Growth models
Oxides
Phase equilibria
Single crystal growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2015.12.037

Cite this

@article{83166eef14c54935a950e15867d0a5e9,

title = "Growth mechanism of AlN crystals via thermal nitridation of sintered Al2O3-ZrO2 plates",

abstract = "The crystal growth of AlN from aluminum oxides was studied using a thermal nitridation method. Four types of aluminum oxides, sintered Al2O3, ZrO2-containing sintered Al2O3, and a- and c-plane sapphires, were used as a source material. As observed, millimeter-sized AlN crystal grains were successfully grown from the ZrO2-containing sintered Al2O3 only at temperatures ranging from 2223 to 2323 K. The growth mechanism, including the role of ZrO2 additive, was discussed from a thermodynamic viewpoint. The following growth model was proposed: predominant nitridation of ZrO2 in Al2O3 suppresses Al2O3 nitridation, and the ZrO2-Al2O3 liquid phase forms, which promotes the formation of Al2O(g) and Al(g) from Al2O3. These Al-based gases react with CN(g) and/or N2(g) to form AlN crystals on the Al2O3-ZrO2 plate.",

keywords = "Nitrides Growth models, Oxides, Phase equilibria, Single crystal growth",

author = "Hiroyuki Fukuyama and Mikako Kato and Yu You and Makoto Ohtsuka",

note = "Funding Information: This research was funded by the Cabinet Office, Government of Japan , through its Funding Program for Next Generation World-Leading Researchers (GR014). We thank Dr. Akikazu Tanaka (Sumitomo Metal Mining Co. Ltd.) for assistance with the quantitative chemical analysis of Zr in the AlN crystals. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2016",

month = mar,

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doi = "10.1016/j.ceramint.2015.12.037",

language = "English",

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T1 - Growth mechanism of AlN crystals via thermal nitridation of sintered Al2O3-ZrO2 plates

AU - Fukuyama, Hiroyuki

AU - Kato, Mikako

AU - You, Yu

AU - Ohtsuka, Makoto

N1 - Funding Information: This research was funded by the Cabinet Office, Government of Japan , through its Funding Program for Next Generation World-Leading Researchers (GR014). We thank Dr. Akikazu Tanaka (Sumitomo Metal Mining Co. Ltd.) for assistance with the quantitative chemical analysis of Zr in the AlN crystals. Publisher Copyright: © 2015 Elsevier Ltd and Techna Group S.r.l.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - The crystal growth of AlN from aluminum oxides was studied using a thermal nitridation method. Four types of aluminum oxides, sintered Al2O3, ZrO2-containing sintered Al2O3, and a- and c-plane sapphires, were used as a source material. As observed, millimeter-sized AlN crystal grains were successfully grown from the ZrO2-containing sintered Al2O3 only at temperatures ranging from 2223 to 2323 K. The growth mechanism, including the role of ZrO2 additive, was discussed from a thermodynamic viewpoint. The following growth model was proposed: predominant nitridation of ZrO2 in Al2O3 suppresses Al2O3 nitridation, and the ZrO2-Al2O3 liquid phase forms, which promotes the formation of Al2O(g) and Al(g) from Al2O3. These Al-based gases react with CN(g) and/or N2(g) to form AlN crystals on the Al2O3-ZrO2 plate.

AB - The crystal growth of AlN from aluminum oxides was studied using a thermal nitridation method. Four types of aluminum oxides, sintered Al2O3, ZrO2-containing sintered Al2O3, and a- and c-plane sapphires, were used as a source material. As observed, millimeter-sized AlN crystal grains were successfully grown from the ZrO2-containing sintered Al2O3 only at temperatures ranging from 2223 to 2323 K. The growth mechanism, including the role of ZrO2 additive, was discussed from a thermodynamic viewpoint. The following growth model was proposed: predominant nitridation of ZrO2 in Al2O3 suppresses Al2O3 nitridation, and the ZrO2-Al2O3 liquid phase forms, which promotes the formation of Al2O(g) and Al(g) from Al2O3. These Al-based gases react with CN(g) and/or N2(g) to form AlN crystals on the Al2O3-ZrO2 plate.

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KW - Oxides

KW - Phase equilibria

KW - Single crystal growth

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