The role of a thin ZnO epilayer in the reactive solid-phase epitaxial (R-SPE) process and the growth mechanism for single crystalline InGaO 3(ZnO)5 (IGZO) growth was investigated. The single-crystalline IGZO seeds grains were initially formed epitaxially on the substrate or on the thin ZnO epilayer through a solid reaction between the polycrystalline IGZO layer and the thin ZnO epitaxial layer. It was found that the ZnO epilayer works as a seed and a template for determining the crystallographic orientation. The results show that the high anisotropy in crystal growth led to a large-area single crystalline film.
ASJC Scopus subject areas
- Physics and Astronomy(all)