Growth mechanism for single-crystalline thin film of InGaO 3(ZnO)5 by reactive solid-phase epitaxy

Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Orita, Masahiro Hirano, Toshiyuki Suzuki, Chizuru Honjyo, Yuichi Ikuhara, Hideo Hosono

    Research output: Contribution to journalArticlepeer-review

    59 Citations (Scopus)


    The role of a thin ZnO epilayer in the reactive solid-phase epitaxial (R-SPE) process and the growth mechanism for single crystalline InGaO 3(ZnO)5 (IGZO) growth was investigated. The single-crystalline IGZO seeds grains were initially formed epitaxially on the substrate or on the thin ZnO epilayer through a solid reaction between the polycrystalline IGZO layer and the thin ZnO epitaxial layer. It was found that the ZnO epilayer works as a seed and a template for determining the crystallographic orientation. The results show that the high anisotropy in crystal growth led to a large-area single crystalline film.

    Original languageEnglish
    Pages (from-to)5532-5539
    Number of pages8
    JournalJournal of Applied Physics
    Issue number10
    Publication statusPublished - 2004 May 15

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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