Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (1 1 1)/GaAs (1 1 1)B substrates by MOVPE

Sakuntam Sanorpim, Ryuji Katayama, Kajornyod Yoodee, Kentaro Onabe

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Hexagonal phase GaN layers were grown by metalorganic vapor phase epitaxy (MOVPE) on GaAs (1 1 1)B substrates using the cubic phase GaN (c-GaN) as an intermediate layer. High-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) measurements showed fairly good crystalline qualities of the h-GaN layers. Dislocation densities estimated from cross-sectional TEM micrographs were found to be as low as 107-108 cm -2. Flat growth of the c-GaN intermediate layer on GaAs (1 1 1)B substrate was achieved at a low-growth temperature (600 °C). The interface between the GaN layer and the GaAs (1 1 1)B substrate is very smooth without any voids, in spite of the high-growth temperatures of 880-960 °C. It is interesting that the lattice-matched h-GaN layer to the c-GaN intermediate layer can be obtained by controlling the cubic-to-hexagonal structural transition during the MOVPE growth process at appropriate growth temperatures. The growth mechanism and characteristics of the grown h-GaN layers are discussed.

Original languageEnglish
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. Crystal structure
  • A1. High-resolution X-ray diffraction
  • A1. Structural transition
  • A1. Transmission electron microscopy
  • A3. MOVPE
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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