Abstract
Two kinds of <111>-oriented β-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (<d>) as a function of the distance from substrate (h) follows power laws of <d> ∞ h0.62 and <d> ∞ h0.71, respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented β-SiC.
Original language | English |
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Pages (from-to) | 236-241 |
Number of pages | 6 |
Journal | Journal of the American Ceramic Society |
Volume | 98 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2015 Jan |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry