Growth mechanism and defects of <111>-oriented β-SiC films deposited by laser chemical vapor deposition

Song Zhang, Qingfang Xu, Rong Tu, Takashi Goto, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Two kinds of <111>-oriented β-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (<d>) as a function of the distance from substrate (h) follows power laws of <d> ∞ h0.62 and <d> ∞ h0.71, respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented β-SiC.

Original languageEnglish
Pages (from-to)236-241
Number of pages6
JournalJournal of the American Ceramic Society
Volume98
Issue number1
DOIs
Publication statusPublished - 2015 Jan

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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