Growth mechanism and defects of <111>-oriented β-SiC films deposited by laser chemical vapor deposition

Two kinds of <111>-oriented β-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (<d>) as a function of the distance from substrate (h) follows power laws of <d> ∞ h^0.62 and <d> ∞ h^0.71, respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented β-SiC.