TY - JOUR
T1 - Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
AU - Enta, Y.
AU - Takegawa, Y.
AU - Suemitsu, M.
AU - Miyamoto, N.
N1 - Funding Information:
This work was supportedi n part by Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 1996/7
Y1 - 1996/7
N2 - Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.
AB - Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.
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U2 - 10.1016/0169-4332(96)00318-2
DO - 10.1016/0169-4332(96)00318-2
M3 - Article
AN - SCOPUS:0030564421
VL - 100-101
SP - 449
EP - 453
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -