Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Y. Enta; Y. Takegawa; M. Suemitsu; N. Miyamoto

doi:10.1016/0169-4332(96)00318-2

Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Y. Enta, Y. Takegawa, M. Suemitsu, N. Miyamoto

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.

Original language	English
Pages (from-to)	449-453
Number of pages	5
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00318-2
Publication status	Published - 1996 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(96)00318-2

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title = "Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy",

abstract = "Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.",

author = "Y. Enta and Y. Takegawa and M. Suemitsu and N. Miyamoto",

note = "Funding Information: This work was supportedi n part by Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.",

year = "1996",

month = jul,

doi = "10.1016/0169-4332(96)00318-2",

language = "English",

volume = "100-101",

pages = "449--453",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

AU - Enta, Y.

AU - Takegawa, Y.

AU - Suemitsu, M.

AU - Miyamoto, N.

N1 - Funding Information: This work was supportedi n part by Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.

PY - 1996/7

Y1 - 1996/7

N2 - Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.

AB - Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.

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JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Abstract

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