Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn SiO2 interface

J. Koike, M. Haneda, J. Iijima, Y. Otsuka, H. Sako, K. Neishi

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101 Citations (Scopus)

Abstract

A thin diffusion barrier was self-formed by annealing at an interface between a Cu-Mn alloy film and a SiO2 substrate. The growth of the barrier layer followed a logarithmic rate law, which represents field-enhanced growth mechanism in the early stage and self-limiting growth behavior in the late stage. The barrier layer was stable at 450 °C for 100 h and at 600 °C for 10 h. The interface diffusivity was estimated from the morphology change of the barrier layer at 600 °C and was found to be smaller than the grain-boundary diffusivity of bulk Cu.

Original languageEnglish
Article number043527
JournalJournal of Applied Physics
Volume102
Issue number4
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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